unisonic technologies co., ltd 2sa1201 pnp silicon transistor www.unisonic.com.tw 1 of 3 copyright ? 2014 unisonic technologies co., ltd qw-r204-024.e silicon pnp epitaxial transistor ? description the utc 2sa1201 is designed for power amplifier and voltage amplifier applications. ? features *high voltage: v ceo = -120v *high transition frequency: f t =120mhz(typ.) *p c =1 to 2 w(mounted on ceramic substrate) ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 - 2sa1201g-x-ab3-r sot-89 b c e tape reel 2sa1201l-x-t92-b 2sa1201g-x-t92-b to-92 e c b tape box 2sa1201l-x-t92-k 2SA1201G-X-T92-K to-92 e c b bulk note: pin assignment: b: base c: collector e: emitter ? marking sot-89 to-92
2sa1201 pnp silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r204-024.e ? absolute maximum ratings (t a =25 ? c, unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo -120 v collector-emitter voltage v ceo -120 v emitter-base voltage v ebo -5 v collector current i c -800 ma base current i b -160 ma collector power dissipation sot-89 p c 500 mw 1000 (note 2) mw to-92 600 mw junction temperature t j 150 ? c storage temperature t stg -55 ~ +150 ? c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. mounted on cermic substrate( 250mm 2 0.8t ) ? electrical characteristics (t a =25 ? c, unless otherwise specified) parameter symbol test conditions min typ max unit collector to emitter breakdown voltage v ( br ) ceo i c = -10ma, i b =0 -120 v emitter to base br eakdown voltage v ( br ) ebo i e = -1ma, i c =0 -5 v collector cut-off current i cbo v cb = -120v, i e =0 -0.1 a emitter cut-off current i ebo v eb = -5v, i c =0 -0.1 a dc current gain h fe v ce = -5v, i c = -100ma 80 240 collector to emitter saturation voltage v ce ( sat ) i c = -500ma, i b = -50ma -1.0 v base to emitter voltage v be v ce = -5v, i c = -100ma -1.0 v transition frequency f t v ce = -5v, i c = -100ma 120 mhz collector output capacitance c ob v cb = -10v, i e =0, f=1mhz 30 pf ? classification of h fe rank o y range 80 - 160 120 - 240
2sa1201 pnp silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r204-024.e utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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